PART |
Description |
Maker |
MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
|
KLC700 L25S700 L60S80 L60S8 L60S800 KLC125 L25S40 |
Semiconductor Fuses CAP CER 15000PF 100V 20% X7R0805 CAP 10U00 MLC Y5V 10V0 Z 1206CS T-R Semiconductor Fuses 半导体保险丝 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 半导体保险丝
|
LITTELFUSE[Littelfuse] Littelfuse, Inc.
|
GVT73512A8 73512A8S |
REVOLUTIONARY PINOUT 512K X 8 From old datasheet system
|
Galvantech
|
GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16 From old datasheet system
|
Galvantech
|
PDM31096SA8TTY PDM31096SA8TTR PDM31096SA8SOTR PDM3 |
4 megabit 3.3V static RAM 512K x 8-bit revolutionary pinout
|
PARADIGM
|
IS63LV102407 IS63LV1024L-10JLI IS63LV1024L-10T IS6 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
SPA11N80C3 SPA11N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|